Optimization and Performance Evaluation of ZnS-Based Schottky Diode Simulated in Silvaco TCAD

Abstract

This research shares the plan, testing, and improvement of ZnS Schottky diode using N-ZnS and P-Si materials. The Silvaco TCAD software was used for the testing. It's important to blend p-Si & n-ZnS carefully for Schottky diodes with top-notch performance. The V-I characteristics Schottky diodes were deeply analyzed to guarantee the best efficiency and least leakage current. The emphasis was on reaching high rectification ratios and low reverse leakage currents under various conditions. By carefully adjusting device settings using advanced simulation methods, the performance metrics like forward current density and ideality factor were enhanced while reducing reverse leakage current. The results show a noteworthy enhancement in customization. Tailored Schottky diodes offer superior performance and reliability in diverse fields such as power electronics, solar devices, & sensor technologies. This research enhances semiconductor device engineering by highlighting the superior features of high-performance ZnS-based Schottky diodes developed with Silvaco TCAD software.