Performance Analysis of 2D Dual-Gate MoTe2 FETs With High-k Dielectrics: A Comparative Study Of HfO2 And La2O3

Abstract

The proposed work uses MoTe2, a type of Transition Metal Dichalcogenide (TMD) channel material, to investigate a monolayer double-gated 2D-FET configuration. The monolayer double-gated 2D-FET structure is advantageous for ultra-large-scale integration and offers more control over subthreshold parameters. Additionally, these designs offer minimal leakage and excellent control over the channel's current. The design of a double-gated 2D-FET using High-K gate dielectric materials, such as lanthanum dioxide and hafnium oxide, as the gate oxide is covered in this study. A comparison of silicon dioxide transistors of the same size, Hafnium oxide and lanthanum oxide as the gate oxide is performed. The comparison primarily focuses on performance metrics such as transconductance, subthreshold slope, and drain current behavior. Using a High-K dielectric material leads to an increase in ON current, which in turn enhances other parameters such as the subthreshold slope, transconductance, and intrinsic gain.