Analyzing Work Function Dependency for Doping Variations in Double Gate Junction Less Field Effect Transistor: A TCAD Simulation Perception. International Research Journal on Advanced Engineering Hub (IRJAEH), [S. l.], v. 2, n. 09, p. 2390–2395, 2024. DOI: 10.47392/IRJAEH.2024.0328. Disponível em: https://irjaeh.com/index.php/journal/article/view/386.. Acesso em: 21 nov. 2024.